vishay siliconix SI4447ADY new product document number: 67189 s10-2767-rev. a, 29-nov-10 www.vishay.com 1 p-channel 40 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? load switches, adaptor switch - notebook pcs product summary v ds (v) r ds(on) ( ? )i d (a) d q g (typ.) - 40 0.045 at v gs = - 10 v - 7.2 11.8 nc 0.062 at v gs = - 4.5 v - 6.1 notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. maximum under steady stat e conditions is 85 c/w. d. based on t c = 25 c. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 7.2 a t c = 70 c - 5.7 t a = 25 c - 5.5 a, b t a = 70 c - 4.4 a, b pulsed drain current i dm - 20 continuous source-drain diode current t c = 25 c i s - 3.5 t a = 25 c - 2.1 a, b avalanche current l = 0.1 mh i as - 10 single-pulse avalanche energy e as 5mj maximum power dissipation t c = 25 c p d 4.2 w t c = 70 c 2.7 t a = 25 c 2.5 a, b t a = 70 c 1.6 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, c t ?? 10 s r thja 40 50 c/w maximum junction-to-foot steady state r thjf 24 30 s s d d d s g d so-8 5 6 7 8 top view 2 3 4 1 ordering information: SI4447ADY-t1-ge3 (lead (pb)-free and halogen-free) s g d p-channel mosfet
www.vishay.com 2 document number: 67189 s10-2767-rev. a, 29-nov-10 vishay siliconix SI4447ADY new product notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 40 v v ds temperature coefficient ? v ds /t j i d = - 250 a - 42 mv/c v gs(th) temperature coefficient ? v gs(th) /t j 4.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.2 - 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 40 v, v gs = 0 v - 1 a v ds = - 40 v, v gs = 0 v, t j = 55 c - 5 on-state drain current a i d(on) v ds ? - 10 v, v gs = - 10 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 5 a 0.036 0.045 ? v gs = - 4.5 v, i d = - 4 a 0.050 0.062 forward transconductance a g fs v ds = - 10 v, i d = - 5 a 14 s dynamic b input capacitance c iss v ds = - 20 v, v gs = 0 v, f = 1 mhz 970 pf output capacitance c oss 120 reverse transfer capacitance c rss 95 total gate charge q g v ds = - 20 v, v gs = - 10 v, i d = - 5 a 25 38 nc v ds = - 20 v, v gs = - 4.5 v, i d = - 5 a 11.8 18 gate-source charge q gs 3 gate-drain charge q gd 5.2 gate resistance r g f = 1 mhz 1.0 5.5 11 ? tu r n - o n d e l ay t i m e t d(on) v dd = - 20 v, r l = 4 ? i d ? - 5 a, v gen = - 10 v, r g = 1 ? 714 ns rise time t r 12 24 turn-off delaytime t d(off) 30 60 fall time t f 918 tu r n - o n d e l ay t i m e t d(on) v dd = - 20 v, r l = 4 ? i d ? - 5 a, v gen = - 4.5 v, r g = 1 ? 44 80 rise time t r 33 60 turn-off delaytime t d(off) 28 55 fall time t f 13 25 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 3.5 a pulse diode forward current i sm - 20 body diode voltage v sd i s = - 2 a, v gs = 0 v - 0.76 - 1.2 v body diode reverse recovery time t rr i f = - 2 a, di/dt = 100 a/s, t j = 25 c 27 50 ns body diode reverse recovery charge q rr 19 35 nc reverse recovery fall time t a 14 ns reverse recovery rise time t b 13
document number: 67189 s10-2767-rev. a, 29-nov-10 www.vishay.com 3 vishay siliconix SI4447ADY new product typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10vthru5v v gs =4v v gs =3v v ds - drain-to-source voltage (v) i d - drain current (a) 0.00 0.02 0.04 0.06 0.08 0.10 0 6 12 18 24 30 v gs =10v v gs =4.5v r ds(on) - on-resistance ( ) i d - drain current (a) 0 2 4 6 8 10 0.0 5.1 10.2 15.3 20.4 25.5 i d =5a v ds =20v v ds =30v v ds =10v q g - total gate charge (nc) v gs - gate-to-source voltage (v) transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 012345 t c = 125 c t c = 25 c t c = - 55 c v gs - gate-to-source voltage (v) i d - drain current (a) c rss 0 320 640 960 1280 1600 0.0 2.4 4.8 7.2 9.6 12.0 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 i d =5a v gs =4.5v v gs =10v t j - junction temperature (c) (normalized) r ds(on) - on-resistance
www.vishay.com 4 document number: 67189 s10-2767-rev. a, 29-nov-10 vishay siliconix SI4447ADY new product typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) i s - source current (a) - 0.4 - 0.2 0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 i d =1ma i d = 250 a v gs(th) variance (v) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.04 0.08 0.12 0.16 0.20 0246810 t j =25 c t j = 125 c i d =5a r ds(on) - on-resistance ( ) v gs - gate-to-source voltage (v) 0 10 20 30 40 50 power (w) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operating area 0.01 100 1 100 0.01 0.1 10 ms 0.1 1 10 10 t a = 25 c single pulse 1ms dc bvdss limited 1s 10 s 100 ms limited by r ds(on) * v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified i d - drain current (a)
vishay siliconix SI4447ADY document number: 67189 s10-2767-rev. a, 29-nov-10 www.vishay.com 5 new product typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0.0 1.6 3.2 4.8 6.4 8.0 0 255075100125150 t c - case temperature (c) i d - drain current (a) power, junction-to-foot 0 1 2 3 4 5 0 25 50 75 100 125 150 t c - case temperature (c) power (w) power derating, junction-to-ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a - ambient temperature (c) power (w)
www.vishay.com 6 document number: 67189 s10-2767-rev. a, 29-nov-10 vishay siliconix SI4447ADY new product typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67189 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 0.05 single pulse 0.02
vishay siliconix package information document number: 71192 11-sep-06 www.vishay.com 1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0808 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s
application note 826 vishay siliconix www.vishay.com document number: 72606 22 revision: 21-jan-08 application note recommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index return to index
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